Silan LED semiconductor chip cost SVF18N50T SVF18N50T. F. PN Xiamen Silan SVF13N60AF ??stable semiconductor MOS tube LED semiconductor chip Silan SVF18N50T cost SVF18N50T. F. PN Silan large number of sources SVF20NE50PN Flytech Electronics Supply Silan SVF20NE60PN [electronics industry] [factory] Silan LED switching circuit chip SVF20N50F.PN [] [Dongguan] Silan Silan SVF20N60F.PN SVF9N65F original authentic [Shenzhen] a lot of Silan sources SVF9N90 F. PN [Huaqiang North] MOS tube SVF3N50D.MJ lot Silan semiconductor components] [Silan ICMOS tube SVF4N90F Overview Flytech electronic [Tel: 075588257825 15622829450 Enterprise QQ: 2355410666] such programs mainly Silan AC-DC products chip, mobile phone chargers, DVD power, DVB adapter and PC power supply design for the main application direction. The main chip SD484X series features. Built-in PWM control circuit and high-voltage power MOSFET. With respect to the control circuit and the power MOSFET for the separation and reduce the cost and improve the reliability of the circuit. MOSFET's on-resistance maximum specifications were: 16.8 ohms, 9.6 ohms, 6.0 ohms, 4.8 ohms, 3.6 ohms. Corresponding peak current maximum is: 0.6 A, 0.75 A, 0.90 A, 1.20 A, 1.50A. Can be selected according to the desired output power of the actual chip. The main chip with low power consumption, low start-up current and low EMI, the maximum efficiency can reach 80%. Starting voltage and output voltage can be adjusted, the power range for the current circuit can provide: a narrow voltage range of 5 ~ 18W, wide voltage range of 7 ~ 21W. Built-in 15ms soft start circuit, reducing the stress of the main chip startup transformer. The switching frequency of the main chip 67KHz, oscillation frequency jitter, can reduce EMI. In standby mode, the main chip enters hiccup mode, thus effectively reducing the main chip standby power consumption. Main chip integrates a variety of abnormal state protection. Include undervoltage lockout, overvoltage protection, leading edge blanking, overcurrent protection and thermal protection. After the occurrence of the main chip protection, the chip can continue to automatically restart until the system is normal. Advantages according Tuoshi Lan integrated 650V MOSFET, 650V BCD, 25V BCD special technology platform, optimized power architecture (forward, flyback, half-bridge, active clamp, critical conduction, continuous conduction), can be applied to AC-DC power conversion products. Involved in product solutions of high performance, low power consumption, is the green power management solutions, programs to achieve convenience. "Discrete devices to Silan advanced and stable chip production line manufacturing process platform and strong capacity basis, the company developed a variety of semiconductor discrete devices products, mainly used in the field of high-voltage power device products and special structures, is the the largest component suppliers, some products have been into the internationally renowned brands and is widely adopted. Meanwhile, Silan also strongly invested the most advanced SiC (silicon carbide) and AaN (GaN) compound material power research and development of the device. S-Rin? series of high pressure depletion type MOS product SVD501DEAG F-Cell? series of high-voltage MOS products SVF1 N60M.MJ.BDN SVF2N60T.FM MJ.DNNF SVF2N65F.N.MJ SVF2N70F.MDNF.MJ SVF2N80AD SVF3N80T .FMMJ.D SVF4N60T.FMMJ.KD SVF4N65T.FMDMJ.KS SVF4N70F SVF4N80F.D.MJ SVF830T. FD MJ.M SVF5N60T.F.MJ.D SVF5N80T.F.MJ SVF6N60F, MJ, D, S SVF6N70F, MJ SVF7N60.TFMJ.SK SVF7N65F.KS SVF7N80F SV F840T, F, D, S SVF8N60T.F SVF8N65T SVF8N70F SVF8N80T, F SVF10N60T, F, S, K SVF10N60AF ??SVF10N65T, F, K, S SVF12N60T. FS K SVF12N65T, F, K, S SVF13N50T. F. PN SVF13N60AF ??SVF18N50T. F. PN SVF20NE50PN SVF20NE60PN SVF20N50F.PN SVF20N60F.PN SVF9N65F SVF9N90 F. PN SVF3N50D.MJ SVF4N90F SVF9N60T SVFiN65MJ SVF18N60F SVF7N65AF SVF740F, T SVF10N80F, K SVF2NSOF, D, NF, MJ SVF11N90PN SVF730M , F, T, D SVF23N50PN SVF25NE50PN SVF1N50B SVF18NE50PN SVF11N60F, T SVF11NE90PN SVF7N65BF SVF4N60BF SVF14N50F SVF18N65F "